Schottky barrier height value and calculation of voltage-current characteristics Al/n-(SiC)_1-x(AlN)_xdiodes and geterotransition, based on 4H-SiC | Izvestiya vuzov. Fizika. 2019. № 9. DOI: 10.17223/00213411/62/9/113

Schottky barrier height value and calculation of voltage-current characteristics Al/n-(SiC)_1-x(AlN)_xdiodes and geterotransition, based on 4H-SiC

Values on the heights of Schottky barriers on systems M/n is (SiC)_{1- x}(AlN) _x with the expectation of high density of surface states in the area of contact of metal (M) and solid solution of SiC-AlN. Calculated voltage-current characteristics diodes Al/n-(SiC)_{1- x}(AlN) _x . Demonstrates that for these diodes at moderate concentrations of surface conditions (c≈ 4 ÷ 8) value of Schottky barrier Ф^x_B(с) is set to order the potential barrier heterojunction Ф^x_g, the reason is known [1] the similarity in the behaviour of the respective voltage-current characteristics. Examine the role of the ideality factor behavior of the voltage-current characteristics. The heights of Schottky barriers values are consistent with those experiences.

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Keywords

барьер Шоттки, твердые растворы SiC, ВАХ диодов, составная модель, эмиссионные токи, Schottky barrier, solid solutions of SiC, voltage-current characteristics diodes, composite model, emission currents

Authors

Name	Organization	E-mail
Altukhov V.I.	North-Caucasian Federal University (branch) in Pyatigorsk	altukhovv@mail.ru
Sankin A.V.	North-Caucasian Federal University (branch) in Pyatigorsk	zam-id@pfncfu.ru
Antonov V.F.	North-Caucasian Federal University (branch) in Pyatigorsk	antonovpgtu@mail.ru
Filipova S.V.	North-Caucasian Federal University (branch) in Pyatigorsk	filipova-sv@yandex.ru
Mitugova O.A.	North-Caucasian Federal University (branch) in Pyatigorsk	mitjugova@yandex.ru

Всего: 5

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