InAlN/GaN hemt plasma etching
The experimental data on the plasma etching of sub-100 nm gate gaps in transistors with high electron mobility (HEMT) based on InAlN/GaN heterostructures are analyzed. The influence of the parameters of the plasma etching process on the degradation of the InAlN/GaN HEMT parameters is considered. The possibility of forming a gate gap of 70 nm length in InAlN/GaN HEMT using reactive ion etching in Si3N4 of 105 nm thick is shown.
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Keywords
InAlN/GaN-транзистор с высокой подвижностью электронов, плазменное травление, InAlN/GaN transistor with high electron mobility, plasma etchingAuthors
| Name | Organization | |
| Filippov I.A. | Bauman Moscow State Technical University | ivnfilippov@gmail.com |
| Shakhnov V.A. | Bauman Moscow State Technical University | shakhnov@mail.ru |
| Velikovskiy L.E. | National Research Tomsk State University | velikovskiy@gmail.com |
| Brudnyi P.A. | National Research Tomsk State University | paul702600@gmail.com |
| Demchenko O.I. | National Research Tomsk Polytechnic University | demchenko.olga.i@gmail.com |
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