Formation of double steps on Si(001): effect of permeability of the A-steps
A model of the step dynamics on the vicinal double-domain Si(001) surface during MBE growth is developed. The model takes into account the possibility for adatoms to cross the SA step edges before visiting the kink sites at the edges (the step permeability effect). It is demonstrated that the increasing SA step permeability increases the rate at which the mobile impermeable SB steps catch up with the SA steps and thus favors the transition to the single-domain Si(001) surface. It is important that the rapid pairing of SA and SB steps observed in the experiments requires the presence of the inverse Ehrlich-Schwoebel barrier for attachment of adatoms on the TB terrace to the SA step. At the same time, the standard Ehrlich-Schwoebel barrier might be very small or even zero which is in agreement with results of the ab initio calculations of the diffusion barriers at the SA step.
Keywords
кремний,
поверхность,
реконструкция,
ступени,
изломы,
диффузия,
silicon,
surface,
reconstruction,
steps,
kinks,
diffusionAuthors
| Hervieu Yu.Yu. | National Research Tomsk State University | ervye@mail.tsu.ru |
Всего: 1
References
Dabrowski J. and Mussig H.-J. Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World. - World Scientific, 2000. - 576 p.
Болховитянов Ю.Б., Пчеляков О.П. // УФН. - 2008. - Т. 178. - Вып. 5. - С. 459-480.
Есин М.Ю., Эрвье Ю.Ю., Тимофеев В.А., Никифоров А.И. // Изв. вузов. Физика. - 2018. - Т. 61. - № 7. - С. 22-26.
Hoeven A.J. et al. // Phys. Rev. Lett. - 1989. - V. 63. - P. 1830-1832.
Hong W., Zhang Z., and Suo Z. // Phys. Rev. B. - 2006. - V. 74. - P. 235318.
Ehrlich G. and Hudda F.G. // J. Chem. Phys. - 1996. - V. 44. - P. 1039-1049.
Schwoebel R.L. and Chipsey E.J. // J. Appl. Phys. - 1966. - V. 37. - P. 3682-3686.
Zhang Q.-M. et al. // Phys. Rev. Lett. - 1995. - V. 75. - P. 101-104.
Tanaka S. et al. // Phys. Rev. Lett. - 1997. - V. 78. - P. 3342-3345.
Filimonov S.N. and Hervieu Yu.Yu. // Surf. Sci. - 2004. - V. 553. - P. 133-144.
Chadi D.J. // Phys. Rev. Lett. - 1987. - V. 59. - P. 1691-1694.
Mo Y.-W. and Lagally M.G. // Surf. Sci. - 1991. - V. 248. - P. 313-320.
Filimonov S. and Voigtländer B. // Surf. Sci. - 2004. - V. 549. - P. 31-36.
Markov I.V. Crystal Growth for Beginners, Fundamentals of Nucleation, Crystal Growth and Epitaxy. - Second ed. - World Scientific: Singapore, 2003. - 546 p.
