Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum abalysis methods | Izvestiya vuzov. Fizika. 2022. № 9. DOI: 10.17223/00213411/65/9/106

Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum abalysis methods

The paper, which consists of two parts, presents a detailed consideration of the method proposed by the authors, which is discrete analysis of the mobility spectrum, and its application for studying the parameters of charge carriers in CdHgTe. The first part of the work is a brief review of the existing methods of the analysis of the magnetic field dependences of the Hall coefficient and conductivity in structures with a multi-carrier spectrum. The underlying principles of various methods are considered, including the original mobility spectrum analysis proposed by Beck and Anderson, the multi-carrier fitting, and the iterative method developed by Dziuba and Gorska, as well as more recent developments. The advantages, drawbacks, and limits of applicability of these methods are discussed.

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Keywords

CdHgTe, electrical properties, charge carriers parameters, mobility spectra

Authors

NameOrganizationE-mail
Izhnin I.I.Scientific Research Company “Electron-Carat”; National Research Tomsk State Universityi.izhnin@carat.electron.ua
Voitsekhovskii A.V.National Research Tomsk State Universityvav43@mail.tsu.ru
Korotaev A.G.National Research Tomsk State Universitykor@mail.tsu.ru
Mynbaev K.D.Ioffe Institutemynkad@mail.ioffe.ru
Всего: 4

References

Кульчицкий Н., Наумов А., Старцев В. // Электроника: Наука, Технология, Бизнес. - 2020. - № 6(00197). - С. 114-121.
Варавин В.С., Дворецкий С.А., Михайлов Н.Н. и др. // Автометрия. - 2020. - Т. 56. - № 5. - С. 12-56.
Бурлаков И.Д. // Успехи инфракрасной фотосенсорики: сб. обзорных статей к 75-летию образования НПО «Орион». - М.: АО «НПО «Орион», 2021. - С. 247-270.
Dziuba Z. // Phys. Stat. Sol. (b). - 1987. - V. 140. - No. 4. - P. 213-223.
Gold M.C., Nelson D.A. //j. Vac. Sci. Technol. A. - 1986. - V. 4. - No. 4. - P. 2040-2046.
Beck W.A., Anderson J.R. //j. Appl. Phys. - 1987. - V. 62. - No. 2. - P. 541-553.
Dziuba Z., Górska M. //j. Phys. III. - 1992. - V. 2. - No. 1. - P. 99-110.
Antoszewski J., Seymour D.L., Faraone L., et al. //j. Electron. Mater. - 1995. - V. 24. - No. 9. - P. 1255-1262.
Meyer J.R., Hoffman C.A., Antoszewski J., Faraone L. //j. Appl. Phys. - 1997. - V. 81. - No. 2. - P. 709-713.
Meyer J.R., Hoffman C.A., Bartoli F.J., Antoszewski J., Faraone L. // US Patent No. 5789931. - 1998.
Antoszewski J., Faraone L., Vurgaftman I., et al. //j. Electron. Mater. - 2004. - V. 33. - No. 6. - P. 673-683.
Rothman J., Meilhan J., Perrais G., et al. //j. Electron. Mater. - 2006. - V. 35. - No. 6. - P. 1174-1184.
Umana-Membreno G.A., Antoszewski J., Faraone L., et al. //j. Electron. Mater. - 2010. - V. 39. - No. 7. - P. 1023-1029.
Hock G., Glück M., Hackbarth T., et al. // Thin Sol. Films. - 1998. - V. 336. - No. 1-2. - P. 141-144.
Svensson S.P., Beck W.A., Martel D.C., et al. //j. Cryst. Growth. - 1991. - V. 111. - No. 1-4. - P. 450-455.
Wrobel J., Umana-Membreno G.A., Boguski J., et al. // Phys. Stat. Sol. RRS. - 2020. - V. 14. - No. 1. - P. 1900604.
Umana-Membreno G.A., Antoszewski J., Faraone L. // Microelectron. Eng. - 2013. - V. 109. - No. 9. - P. 232-235.
Pooley O.J., Gilbertson A.M., Buckle P.D., et al. // New J. Phys. - 2010. - V. 12. - No. 5. - P. 053022.
Joung H., Ahn I.H., Yang W., Kim D.Y. // Electron. Mater. Lett. - 2018. - V. 14. - No. 11. - P. 774-783.
Meyer J.R., Hoffman C.A., Bartoli F.J., et al. //j. Electron. Mater. - 1996. - V. 25. - No. 8. - P. 1157-1164.
Meyer J.R., Hoffman C.A., Bartoli F.J., et al. // Semicond. Sci. Technol. - 1993. - V. 8. - No. 6S. - P. 805-823.
Sewell R.H., Musca C.A., Antoszewski J., et al. //j. Electron. Mater. - 2004. - V. 33. - No. 6. - P. 572-578.
Antoszewski J., Musca C.A., Dell J.M., Faraone L. //j. Electron. Mater. - 2000. - V. 29. - No. 6. - P. 837-840.
Nguen T., Antoszewski J., Musca C.A., et al. //j. Electron. Mater. - 2002. - V. 31. - No. 7. - P. 652-659.
Umana-Membreno G.A., Kala H., Antoszewski J., et al. //j. Electron. Mater. - 2013. - V. 42. - No. 11. - P. 3108-3113.
Mollard L., Destefanis G., Rothman J., et al. // Proc. SPIE. - 2008. - V. 6940. - P. 69400F.
Izhnin I.I., Vоitsekhovskii А.V., Коrоtаеv А.G., et al. // Infr. Phys. Technol. - 2017. - V. 81. - No. 3. - P. 52-58.
Tobin S.P., Pultz G.N., Krueger E.E., et al. //j. Electron. Mater. - 1993. - V. 22. - No. 8. - P. 907-914.
Hoerstel W., Klimakow A., Kramer R. //j. Cryst. Growth. - 1990. - V. 101. - No. 1-4. - P. 854-858.
Harman T.C., Honig J.M., Trent P. //j. Phys. Chem. Solids. - 1967. - V. 28. - No. 10. - P. 1995-2001.
Fau C., Dame J.F., DeCarvalho M., et al. // Phys. Stat. Sol. (b). - 1984. - V. 125. - No. 2. - P. 831-838.
Kim J.S., Seiler D.G., Colombo L., Chen M.C. // Semicond. Sci. Technol. - 1994. - V. 9. - No. 9. - P. 1696-1705.
Kim J.S., Seiler D.G., Tseng W.F. //j. Appl. Phys. - 1993. - V. 73. - No. 12. - P. 8324-8335.
Wijewarnasuriya P.S., Boukerche M., Faurie J.P. //j. Appl. Phys. - 1990. - V. 67. - No. 2. - P. 859-852.
Leslie-Pelecky D.L., Seiler D.G., Loloee M.R., Littler C.L. // Appl. Phys. Lett. - 1987. - V. 51. - No. 23. - P. 1916-1918.
Zemel A., Sher Ariel, Eger D. //j. Appl. Phys. - 1987. - V. 62. - No. 5. - P. 1861-1868.
Parat K.K., Taskar N.R., Bhat I.B., Ghandhi S.K. //j. Cryst. Growth. - 1990. - V. 102. - No. 3. - P. 413-418.
Ижнин И.И. Электрофизические свойства CdxHg1-xTe, связанные с бесщелевым состоянием и переходом бесщелевой полупроводник - обычный полупроводник: автореф. дис. … канд. физ-мат. наук. - Львов, 1983. - 22 с.
Hoffman C.A., Meyer J.R., Bartoli F.J., et al. // Phys. Rev. B. - 1989. - V. 39. - No. 6. - P. 52081-5221.
Vurgaftman I., Meyer J.R., Hoffman C.A., et al. //j. Appl. Phys. - 1998. - V. 84. - No. 9. - P. 4966-4973.
Vurgaftman I., Meyer J.R., Hoffman C.A., et al. //j. Electron. Mater. - 1999. - V. 28. - No. 5. - P. 548-552.
Meyer J.R., Vurgaftman I., Redfern D., Antoszewski J., Faraone L., Lindenmuth J.R. // US Patent No. 6100704. - 2000.
Kiatgamolchai S., Myronov M., Mironov O.A., et al. // Phys. Rev. E. - 2002. - V. 66. - No. 3. - Р. 036705.
Chrastina D., Hague J.P., Leadley D.R. //j. Appl. Phys. - 2003. - V. 94. - No. 10. - P. 6583-6590.
Antoszewski J., Umana-Membreno G.A., Faraone L. //j. Electron. Mater. - 2012. - V. 41. - No. 10. - P. 2816-2823.
Kala H., Umana-Membreno G.A., Jolley G., et al. // Appl. Phys. Lett. - 2015. - V. 106. - No. 3. - P. 032103.
Umana-Membreno G.A., Fehlberg T.B., Kolluri S., et al. // Appl. Phys. Lett. - 2011. - V. 98. - No. 22. - P. 222103.
Umana-Membreno G.A., Chang S.J., Bawedin M., et al. // Sol. Stat. Electron. - 2015. - V. 113. - No. 11. - P. 109-115.
Beck W.A. // US Patent No. 10551427 B2. - 2020.
Beck W.A. //j. Appl. Phys. - 2021. - V. 129. - No. 4. - P. 165109.
 Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum abalysis methods | Izvestiya vuzov. Fizika. 2022. № 9. DOI: 10.17223/00213411/65/9/106

Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum abalysis methods | Izvestiya vuzov. Fizika. 2022. № 9. DOI: 10.17223/00213411/65/9/106