UV-photodetectors based on Ga2O3 films with high-speed performance
The results of studying the photoelectric characteristics of Pt/Ga2O3-structures under ultraviolet (UV) radiation with a wavelength of λ = 254 nm are presented in this work. The influence of the annealing temperature in air and the growth time of Ga2O3 films on the photosensitivity and response time of photodetectors based on them is considered. The Ga2O3 films were obtained by RF-magnetron sputtering on sapphire substrates with the base orientation (0001). The Ga2O3 films have high transparency in the long-wave UV (UVA) and visible (VIS) ranges. The maximum values of responsivity and signal-to-noise ratio of the detectors at a voltage of 100 V were 140.6 mA/W and 2∙105 arb. un., respectively. The structures exhibited high-speed performance with the response and recovery times of 7.6 and 2.0 ms, respectively, at a voltage of 10 V. The paper demonstrates the relationship between the photosensitivity and detector response time.
Keywords
photodetector,
gallium oxide,
RF-magnetron sputTERING,
UV-radiation,
speed performanceAuthors
| Almaev Dmitry A. | Tomsk State University; Tomsk State University of Control Systems and Radioelectronics | almaev001@mail.ru |
| Tsymbalov Alexander V. | Tomsk State University | zoldmine@gmail.com |
| Kopyev Viktor V. | Tomsk State University | viktor.kopev@gmail.com |
| Kukenov Olzhas I. | Tomsk State University | okukenov@mail.ru |
Всего: 4
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