Luminescence of synthetic diamonds depending on the method of excitation
A synthetic diamond, due to its unique properties, is widely used in various fields of science and technology. In addition, diamond has a large number of color centers, one of the most common of which is the NV° center. To create crystals with such centers, synthetic diamonds grown by the temperature gradient method with a high content of substitutional nitrogen are usually used. Such crystals are subjected to radiation-heat treatment to create the necessary color centers. Diamonds with a high content of NV° centers are excellent indicators of various kinds of action (electrons, X- and γ-photons, α-particles etc). This article examines the spectra of a synthetic diamond sample under three different types of excitation: electron beams, laser irradiation, and X-ray radiation. The cathodoluminescence (CL) spectra are presented over a wide temperature range from 80 to 700 K. Cathodo-luminescence was excited by an electron beam with energies up to 300 keV. Photoluminescence (PL) spectra were obtained by exciting the crystal with lasers at wavelengths of 371, 405, 450, and 520 nm. X-ray luminescence (XL) was excited by a synchrotron beam with energies up to 6 keV. The paper shows the possibility of using such crystals to create synchrotron-beam imaging monitors designed for a high level of X-ray flux. The authors declare no conflicts of interests.
Keywords
diamond,
cathodoluminescence,
X-ray luminescence,
photoluminescence,
monitor,
NV center,
synchrotron radiationAuthors
| Ripenko Vasily S. | Institute of High-Current Electronics SB RAS; Tomsk State University | dsws@vripenko.ru |
| Peresedova Darya A. | Institute of High-Current Electronics SB RAS; Tomsk State University | |
| Gusev Ivan S. | Institute of Nuclear Physics SB RAS | |
| Shulepov Mikhail A. | Institute of High-Current Electronics SB RAS; Tomsk State University | mixshlp@yandex.ru |
| Burachenko Alexander G. | Institute of High-Current Electronics SB RAS; Tomsk State University | |
| Krylov Alexander A. | Institute of High-Current Electronics SB RAS; Tomsk State University | |
| Artemov Konstantin P. | Institute of High-Current Electronics SB RAS | |
| Goldenberg Boris G. | Institute of Nuclear Physics SB RAS | |
| Vins Viktor G. | WELMAN LLC | |
Всего: 9
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