Generation of boron ions for beam and plasma technologies | Izvestiya vuzov. Fizika. 2019. № 7. DOI: 10.17223/00213411/62/7/19

Generation of boron ions for beam and plasma technologies

The study of the generation of beams and plasma containing boron ions is important due to their need for ion beam and plasma technologies for modifying the surface properties of not only semiconductor, but also other materials. This is due to the fact that boron compounds are hard, chemically resistant materials, and on their basis it is possible to create strong and protective layers on the surface of a wide range of parts. This article presents the principle of operation and characteristics of experimental equipment developed for generating boron plasma and ion beams to create such layers, namely: a vacuum arc ion source with separation of boron isotopes in a magnetic field for high-dose ion implantation, a plasma generator with a target from boron for coating by magnetron sputtering, and forevacuum electron source for the synthesis on the surface of boron-containing coatings by electron beam evaporation.

Download file

Counter downloads: 171

Keywords

thin boron films, electron beam evaporation, ion implanter, plasma, boron ions, тонкие пленки бора, электронно-лучевое испарение, ионный имплантер, плазма, ионы бора

Authors

Name	Organization	E-mail
Bugaev A.S.	Institute of High Current Electronics SB RAS	bugaev@opee.hcei.tsc.ru
Vizir A.V.	Institute of High Current Electronics SB RAS	vizir@opee.hcei.tsc.ru
Gushenets V.I.	Institute of High Current Electronics SB RAS	gvi@opee.hcei.tsc.ru
Nikolaev A.G.	Institute of High Current Electronics SB RAS	nik@opee.hcei.tsc.ru
Oks E.M.	Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics	oks@fet.tusur.ru
Savkin K.P.	Institute of High Current Electronics SB RAS	savlin@opee.hcei.tsc.ru
Yushkov Yu.G.	Tomsk State University of Control Systems and Radioelectronics	yushkovyu@mail.ru
Tyunkov A.V.	Tomsk State University of Control Systems and Radioelectronics	tyunkov84@mail.ru
Frolova V.P.	Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics	frolova_valeriya_90@mail.ru
Shandrikov M.V.	Institute of High Current Electronics SB RAS	shandrikov@opee.hcei.tsc.ru
Yushkov G.Yu.	Institute of High Current Electronics SB RAS	gyushkov@mail.ru

Всего: 11

References

Yongjun Tian, Bo Xu, Dongli Yu, et al. // Nature. - 2013. - V. 493. - P. 385-388.

Zolotukhin D.B., Tyunkov A.V., et al. // Rev. Sci. Instrum. - 2015. - V. 86. - P. 123301.

Oks E.M., Tyunkov A.V., Yushkov Y.G., et al. // Surf. Coat. Technol. - 2017. - V. 325. - P. 1-6.

Бугаев A.С., Гушенец В.И., Николаев А.Г. и др. // Изв. вузов. Физика. - 2000. - Т. 43. - № 2. - С. 21-28.

Oliviera P. The Elements: Periodic Table Reference. - Pediapress.com, 2012.

Savkin K.P., Yushkov Y.G., et al. // Rev. Sci. Instrum. - 2010. - V. 81. - P. 02A501.

Бугаев А.С., Гушенец В.И., Юшков Г.Ю. и др. // Изв. вузов. Физика. - 2001. - Т. 44. - № 9. - С. 15-22.

Nikolaev A.G., Oks E.M., Vizir A.V., et al. // Rev. Sci. Instrum. - 2016. - V. 87. - P. 02A902.

Bugaev A.S., Vizir A.V., et al. // Laser and Particle Beams. - 2003. - V. 21. - No. 2. - P. 139-156.

Zolotukhin D.B., Tyunkov A.V., and Yushkov Y.G. // Appl. Phys. - 2017. - No. 6. - P. 39-43.

Yushkov Y.G., Tyunkov A.V., Oks E.M., et al. // J. Appl. Phys. - 2016. - V. 120. - P. 233302.

Gushenets V.I., Oks E.M., Savkin K.P., et al. // Rev. Sci. Instrum. - 2010. - V. 81. - P. 02B303.

Oks E.M. and Anders A. // Rev. Sci. Instrum. - 2010. - V. 81. - P. 02B306.

Andersson J. and Anders A. // Phys. Rev. Lett. - 2009. - V. 102. - P. 045003.

Hahn J., Freidrich M., Pintaske R., et al. // Diam. Relat. Mater. - 1996. - V. 5. - P. 1103-1112.

Frolova V.P., Gushenets V.I., et al. // IEEE Trans. Plasma Sci. - 2017. - V. 45. - P. 2070-2074.

Gushenets V.I., Oks E.M., and Bugaev A.S. // Proc. 28th Int. Symp. on Discharges and Electrical Insulation in Vacuum. - Greifswald, Germany, 2018. - P. 411-414.

Freeman J. H. // Nucl. Instrum. Methods. - 1963. - V. 22. - P. 306-316.

Williams J.M., Klepper C.C. et.al. // AIP Conf. Proc. - 2008. - V. 1066. - P. 469-472.