Features of radiation disorders in InAlN/GaN HEMT | Izvestiya vuzov. Fizika. 2019. № 9. DOI: 10.17223/00213411/62/9/106

Features of radiation disorders in InAlN/GaN HEMT

The effect of irradiation by protons, electrons, gamma - ray and fast neutrons on the parameters of InAlN / GaN HEMT structures is analyzed. The peculiarities of the initial electronic properties of the InAlN and AlGaN barrier layers with a change in their composition are considered, as well as the change of these properties when exposed to high-energy radiation, taking into account the compositional dependence of the energy position of the charge neutrality level (CNL) in the energy spectra of the barrier layer

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Keywords

InAlN/GaN-транзистор с высокой подвижностью электронов, радиационная стойкость, уровень зарядовой нейтральности, InAlN/GaN high electron mobility transistor, barriers layers, radiation hardness, charge neutrality level

Authors

Name	Organization	E-mail
Afonin A.G.	National Research Tomsk State University	aag@niipmm.tsu.ru
Brudnyi V.N.	National Research Tomsk State University	brudnyi@mail.tsu.ru
Brudnyi P.A.	National Research Tomsk State University	paul702600@gmail.com
Velikovskiy L.E.	National Research Tomsk State University	velikovskiy@gmail.com

Всего: 4

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