Simulation of dimerization on the surface of Si pit-patterned substrates | Izvestiya vuzov. Fizika. 2025. № 7. DOI: 10.17223/00213411/68/7/11

Simulation of dimerization on the surface of Si pit-patterned substrates

Molecular dynamics simulation of surface dimerization in pits of Si pit-patterned substrates has been carried out. The epitaxial growth of Ge on pit-patterned Si substrates is found to be driven by the formation of H-like atomic configurations, including 2 atoms of dimer and 4 atoms in underlying monoatomic layer.

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Keywords

simulation, molecular dynamics, dimerization, pit-patterned substrates

Authors

Name	Organization	E-mail
Novikov Pavel L.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University	novikov@isp.nsc.ru
Pavsky Kirill V.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Siberian State University of Telecommunications and Information Science	pkv@isp.nsc.ru
Zynk Pavel N.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University	p.tsynk@g.nsu.ru

Всего: 3

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