Effect of rectangular aluminum nanoantennas on the optical emission of GeSiSn/Si multiple quantum wells | Izvestiya vuzov. Fizika. 2025. № 7. DOI: 10.17223/00213411/68/7/12

Effect of rectangular aluminum nanoantennas on the optical emission of GeSiSn/Si multiple quantum wells

The spectral positions of a localized surface plasmon resonance in the rectangular aluminum nanoantenna arrays formed on the surface of emitting heterostructures with GeSiSn/Si quantum wells are determined using FTIR reflectance and reflectance anisotropy spectroscopy. It is shown that the interaction of nanoantennas with the optical radiation of GeSiSn/Si leads to its partial polarization. An enhancement of the heterostructures’ photoluminescence intensity is also demonstrated, depending on the spectral overlap of the radiation ranges of multiple quantum wells and the localized surface plasmon resonance in the nanoantennas.

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Keywords

heterostructures, localized surface plasmon resonance, GeSiSn, Fourier spectroscopy, reflectance, reflectance anisotropy spectroscopy, photoluminescence

Authors

Name	Organization	E-mail
Khakhulin Semyon A.	Saint-Petersburg Electrotechnical University «LETI»	khsmn@ya.ru
Kolyada Dmitry V.	Saint-Petersburg Electrotechnical University «LETI»	kolyada.dima94@mail.ru
Firsov Dmitry D.	Saint-Petersburg Electrotechnical University «LETI»	d.d.firsov@gmail.com
Komkov Oleg S.	Saint-Petersburg Electrotechnical University «LETI»	okomkov@yahoo.com
Timofeev Vyacheslav A.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences	Vyacheslav.t@isp.nsc.ru
Skvortsov Ilya V.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences	i.skvortsov@isp.nsc.ru
Mashanov Vladimir I.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences	mash@isp.nsc.ru
Gayduk Alexey E.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences	agff2008@yandex.ru
Utkin Dmitry E.	Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences; Novosibirsk State University	utkinde@isp.nsc.ru

Всего: 9

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