Simulation of superlattice barrier for nBn structures based on n-HgCdTe | Izvestiya vuzov. Fizika. 2025. № 10. DOI: 10.17223/00213411/68/10/1

Simulation of superlattice barrier for nBn structures based on n-HgCdTe

A physical and mathematical model has been developed that allows calculations of the energy spectrum of charge carriers in a superlattice structure based on n-HgCdTe for the purpose of optimizing the parameters of the superlattice barrier in photosensitive nB ( SL ) n structures for the MWIR and LWIR ranges. The model is based on the kp method (8-band Kane kp model). Optimization of the superlattice barrier for the nB ( SL ) n structure based on n -HgCdTe has been carried out. It is shown that a superlattice of 15 periods of HgTe (1.75 nm) / Hg0.3Cd0.7Te (2 nm) layers should provide unimpeded passage of photogenerated (minority) charge carriers through the barrier layer while effectively blocking the current of majority charge carriers in the structure for detecting LWIR radiation.

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Keywords

barrier structure, HgCdTe, nBn, superlattice, molecular beam epitaxy, unipolar structure

Authors

Name	Organization	E-mail
Kashirsky Danila E.	Tomsk State University	kde@mail.tsu.ru
Gorn Dmitry I.	Tomsk State University	gorn.di@gmail.com
Voitsekhovskii Alexander V.	Tomsk State University	vav43@mail.tsu.ru

Всего: 3

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