Electrophysical characteristics of pentacene-based mis structures with a SiO₂ insulator | Izvestiya vuzov. Fizika. 2019. № 1.

Electrophysical characteristics of pentacene-based mis structures with a SiO₂ insulator

In a wide range of frequencies and temperatures, the admittance of MIS structures based on pentacene organic films formed by thermal vacuum deposition on SiO₂ and SiO₂/Ga₂O₃ substrates was experimentally investigated. The capacitance-voltage characteristics of MIS structures with a SiO₂ insulator have virtually no hysteresis. It is shown that, at temperatures of 150-300 K, an inversion layer is formed in the structures at large positive voltage biases. The concentration of holes in the pentacene, determined from capacitive measurements, exceeds 10¹⁸ cm^-3 and is practically independent of temperature and frequency. The experimental frequency dependences of the admittance of MIS structures with a SiO₂ insulator are in good agreement with the calculation results using the method of equivalent circuits. For structures with a Ga₂O₃ layer, the negative differential conductivity of the insulator layer was detected, which requires complication of the equivalent circuit. The possibility of using low-temperature admittance measurements for studying traps in the pentacene film bulk is shown.

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Keywords

bulk traps, inversion layer, low-temperature measurements, equivalent circuits, admittance, Ga₂O₃, SiO₂, MIS structure, pentacene, organic semiconductor, объемные ловушки, инверсионный слой, низкотемпературные измерения, эквивалентные схемы, адмиттанс, Ga₂O₃, SiO₂, МДП-структура, пентацен, органический полупроводник

Authors

Name	Organization	E-mail
Novikov V.A.	National Research Tomsk State University	novikovvadim@mail.ru
Voitsekhovskii A.V.	National Research Tomsk State University; Siberian Physical-Technical Institute Tomsk State University	vav43@mail.tsu.ru
Nesmelov S.N.	National Research Tomsk State University	nesm69@mail.ru
Dzyadukh S.M.	National Research Tomsk State University	bonespirit@mail2000.ru
Kopylova T.N.	Siberian Physical-Technical Institute Tomsk State University	kopylova@phys.tsu.ru
Degtyarenko K.M.	Siberian Physical-Technical Institute Tomsk State University	norma1954@yandex.ru
Chernikov E.V.	Siberian Physical-Technical Institute Tomsk State University	evvch192184@gmail.com
Kalygina V.M.	National Research Tomsk State University	kalygina@ngs.ru

Всего: 8

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