Nonquasi-static p-n-junction model without user-defined recursion | Izvestiya vuzov. Fizika. 2019. № 6. DOI: 10.17223/00213411/62/6/151

Nonquasi-static p-n-junction model without user-defined recursion

A model of the p - n junction, which adequately describes the non-quasistatic effects of accumulation and relaxation of nonequilibrium charge carriers, is considered. Wherein the diffusion charge equation is written in a closed form (it is solved for the diffusion charge). This allowed the computer programming of this model to be performed without a user-defined recursion resolving the differential equation for the diffusion charge. As a result, the non-quasistatic model of the p - n junction is realized as equivalent circuit containing only the usual quasistatic elements of computer-aided design systems.

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Keywords

p-n-переход, диффузионный заряд, неквазистатическая модель, обратное восстановление, p-n junction, diffusion charge, non-quasistatic model, reverse recovery

Authors

Name	Organization	E-mail
Semyonov E.V.	Tomsk State University of Control Systems and Radioelectronics
Malakhovskij O.Yu.	Research Institute of Semiconductor Devises

Всего: 2

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