Optimization of temperature dependence of threshold current of heteronanolasers with consideration of thickness and material of the waveguide nanolayer of heterostructures

In this work the exact problem of distribution of an electromagnetic wave in multilayered nanostructure with complex values of dielectric permeability is solved. In it the contribution to index of refraction of an additive to a dielectric constant at the expense of the injected carriers is considered. The quantum-dimensional heterostructure on the basis of AlGaAs/InGaAs/GaAsnanosystems with one quantum hole used for production of lasers of the range of 0.94-1.14 microns is considered. The used techniques and approaches are applicable as well for optimization of multilayered nanostructures on the basis of other solid solutions. On the basis of the executed calculations and optimization of temperature dependence of radiating characteristics of injection lasers on the basis of nanostructures with one quantum hole it is shown that the abnormal behavior of temperature dependence of threshold current is connected with easing of the waveguide properties of their active area. According to results of calculations optimization of parameters of heterostructure of injection lasers according to thickness and material of the waveguide nanolayer allowing to weaken significantly temperature dependence of their radiating characteristics is carried out.

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