The spectra of growth traps in gallium nitride
The energy spectra of growth traps in the epitaxial layers of undoped and doped gallium nitride grown under various technological conditions are analyzed.
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Keywords
эпитаксиальные слои GaN, ростовые ловушки, epitaxial GaN layers, growth trapsAuthors
| Name | Organization | |
| Brudnyi P.A. | National Research Tomsk State University | paul702600@gmail.com |
References
Polyakov A.Y. and Lee I.-H. // Mater. Sci. Eng. R. Rep. - 2015. - V. 94. - P. 1-56.
Evwaraye A.O, Smith S.R., and Elhamri S. // J. Appl. Phys. - 2014. - V. 115. - P. 033706.
Casteldini A., Cavallini A., and Polenta L. // J. Phys.: Cond. Matter. - 2000. - V. 12. - Р. 10161- 10167.
Armstrong A., Arehart A.R., Green D., et al. // J. App. Phys. - 2005. - V. 98. - P. 053704.
Shah P.B., Dedhia R.H., Tompkins R.P., et al. // Solid-State Electron. - 2012. - V. 78. - P. 121- 126.
Amor S., Ahaitouf A., Ahaitouf A., et al. // Superlattices and Microstructures. - 2017. - V. 101. - P. 529-536.
Auret F.D., Goodman S.A., Koschnick F.K., et al. // Appl. Phys. Lett. - 1999. - V. 74. - P. 407- 409.
Peta K.R., Park B., Lee S., et al. // Thin Solid Films. - 2013. - V. 534. - P. 603-608.
Duc T.T., Pozina G., Son N.T., et al. // Appl. Phys. Lett. - 2014. - V. 105. - P. 102103.
Polenta L., Fang Z.-Q., and Look D.C. // Appl. Phys. Lett. - 2000. - V. 76. - P. 2086-2088.
Armstrong A., Arehart A.R., Moran B., et al. // Appl Phys. Lett. - 2004. - V. 84. - No. 3. - P. 374-376.
Zhang Z., Farzana E., Sun W.Y., et al. // J. Appl. Phys. - 2015. - V. 118. - P. 155701.
Ngoepe P.N.M., Meyer W.E., Auret F.D., et al. // Physica B. - 2018. - V. 535. - P. 96-98.
Hacke P., Detchprohm T., Hiramatsu K., et al. // J. Appl. Phys. - 1994. - V. 76. - P. 304-309.
Umana-Membreno G.A., Dell J.M., Parish G., et al. // IEEE Trans. Electron Dev. - 2003. - V. 50. - P. 2326-2334.
Janse van Rensburg P.J., Auret F.D., Matias V.S., et al. // Physica B. - 2009. - V. 404. - P. 4411-4414.
Song S.F., Chen W.D., Zhang C., et al. // Appl. Phys. Lett. - 2005. - V. 86. - P. 152111.
Kamyczek P., Placzek-Popko E., Kolkovsky V.l., et al. // J. Appl. Phys. - 2012. - V. 111. - P. 113105.
Duc T.T., Pozina G., Son N.T., et al. // J. Appl. Phys. Phys. - 2016. - V. 119. - P. 095707.
Brudnyi V.N., Kolin N.G., and Smirnov L.S. // Semiconductors. - 2007. - V. 41. - No. 9. - P. 1011- 1020.
Брудный В.Н., Кособуцкий А.В., Колин Н.Г. // Изв. вузов. Физика. - 2008. - Т. 51. - № 12. - С. 24-31.
Brudnyi V.N., Kosobutsky A.V., and Kolin N.G.// Semiconductors. - 2009. - V. 43. - No. 10). - P. 1271- 1279.
Chang S.B., Wei S.-H., and Zunger A. // Phys. Rev. Lett. - 2000. - V. 84. - No. 6. - P. 1232-1235.
Boguslawski P., Briggs E.L., and Bernholc J. // Phys. Rev. B. - 1995. - V. 51. - P. 17255.
Gorczyca I., Svane A., and Christensen N.E. // Phys. Rev. B. - 1999. - V. 60. - P.8147.
Van de Walle C.G. and Neugebauer J. // J. Appl. Phys. - 2004. - V.95. - No. 8. - P. 3851-3879.
Брудный В.Н., Гриняев С.Н., Колин Н.Г. // Изв. вузов. Физика. - 2006. - Т. 49. - № 8. - С. 75- 78.
Laaksonen K., Canchenkova M.G., and Nieminen R.M. // J. Phys.: Cond. Mater. - 2009. - V. 21. - P. 015803.
Xie Z., Sul Y., Buckeridge J., et al. // J. Phys. D: Appl. Phys. - 2019. - V. 52. - P. 335104(16).
Lee M., Belkhir M.A., Zhu X.Y., et al. // Phys. Rev. B. - 2000. - V. 61. - P. 16033-16039.
Seager C.H., Wright A.F., Yu J., and Gotz W. // J. Appl. Phys. - 2002. - V. 92. - P. 6553(9).
Jenkins D.W. and Dow J.D. // Phys. Rev. B. - 1989. - V. 39. - P. 3317.
