Localization and nature of radiation donor defects in arsenic-implanted MBE CdHgTe films | Izvestiya vuzov. Fizika. 2020. № 2. DOI: 10.17223/00213411/63/2/98

Localization and nature of radiation donor defects in arsenic-implanted MBE CdHgTe films

Using profiling of electrical parameters of arsenic-implanted molecular-beam epitaxy-grown CdHgTe films and relating the results to the data obtained with secondary-ion mass-spectroscopy and transmission electron microscopy, localization and nature of radiation donor defects formed as a result of implantation have been established. It is shown that these defects are dislocation loops and quasi-point defects that captured mercury interstitials, which were released under the implantation.

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Keywords

СdHgTe, ионная имплантация, дефекты, электрофизические свойства, СdHgTe, ion implantation, defects, electrical properties

Authors

NameOrganizationE-mail
Izhnin I.I.Scientific Research Company “Electron-Carat”; National Research Tomsk State Universityi.izhnin@carat.electron.ua
Fitsych E.I.Scientific Research Company “Electron-Carat”о_fitsych@ukr.net
Voitsekhovskii A.V.National Research Tomsk State Universityvav43@mail.tsu.ru
Korotaev A.G.National Research Tomsk State Universitykor@mail.tsu.ru
Mynbaev K.D.ITMO Universitymynkad@mail.ioffe.ru
Kurbanov K.R.Kremenchuk Flight College of National Aviation Universitykurbanovkurban424@gmail.com
Varavin V.S.Rzhanov Institute of Semiconductor Physics of SB RASvaravin@isp.nsc.ru
Dvoretskii S.A.Rzhanov Institute of Semiconductor Physics of SB RASdvor@isp.nsc.ru
Mikhailov N.N.Rzhanov Institute of Semiconductor Physics of SB RASmikhailov@isp.nsc.ru
Remesnik V.G.Rzhanov Institute of Semiconductor Physics of SB RASremesnik@isp.nsc.ru
Yakushev M.V.Rzhanov Institute of Semiconductor Physics of SB RASyakushev@isp.nsc.ru
Bonchyk A.Yu.Pidstrygach Institute for Applied Problems of Mechanics and Mathematicsbonchyk@ukr.net
Savytskyy G.V.Pidstrygach Institute for Applied Problems of Mechanics and Mathematicsgrigorij.savitskij@gmail.com
Świątek Z.Institute of Metallurgy and Material Science PANz.swiatek@imim.pl
Morgiel J.Institute of Metallurgy and Material Science PANj.morgiel@imim.pl
Всего: 15

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 Localization and nature of radiation donor defects in arsenic-implanted MBE CdHgTe films | Izvestiya vuzov. Fizika. 2020. № 2. DOI: 10.17223/00213411/63/2/98

Localization and nature of radiation donor defects in arsenic-implanted MBE CdHgTe films | Izvestiya vuzov. Fizika. 2020. № 2. DOI: 10.17223/00213411/63/2/98