Admittance of barrier structures based on mercury cadmium telluride
The results of studies of the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates are presented. Using passivation with an Al2O3 dielectric, device nBn structures based on HgCdTe were fabricated, and the layer parameters in the created structures provided the possibility of detection in the spectral range of 3-5 μm. Based on the analysis of the frequency dependences of the admittance, an equivalent circuit of nBn structures at small biases is proposed. The dependences of the parameters of the equivalent circuit on the mesa structure area and on temperature are determined. The properties of high-temperature maxima on the on the voltage dependences of capacitance and conductance of nBn structures, which are presumably associated with the recharging of surface states at the heterointerface between the barrier and absorbing layers, are studied. It was found that in a wide range of frequencies and temperatures, the capacitance-voltage characteristics of nBn structures based on HgCdTe at reverse biases can be used to determine the concentration of donor impurities in the absorbing layer. It is shown that the admittance of test MIS devices in the mesa configuration, formed on the basis of nBn structures from MBE HgCdTe, is determined by the combined influence of processes in the contact, barrier, and absorbing layers.
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Keywords
HgCdTe, молекулярно-лучевая эпитаксия, nBn-структура, барьерные детекторы, адмиттанс, вольт-фарадная характеристика, метод эквивалентных схем, концентрация примеси, HgCdTe, molecular beam epitaxy, nBn structure, barrier detectors, admittance, capacitance-voltage characteristic, equivalent circuit method, dopant concentrationAuthors
| Name | Organization | |
| Voitsekhovskii A.V. | National Research Tomsk State University | vav43@mail.tsu.ru |
| Nesmelov S.N. | National Research Tomsk State University | nesm69@mail.ru |
| Dzyadukh S.M. | National Research Tomsk State University | bonespirit@mail2000.ru |
| Dvoretsky S.A. | National Research Tomsk State University; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS | dvor@isp.nsc.ru |
| Mikhailov N.N. | Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS | mikhailov@isp.nsc.ru |
| Sidorov G.Yu. | Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS | george@isp.nsc.ru |
| Yakushev M.B. | Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS | yakushev@isp.nsc.ru |
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