The measurement of charge carrier lifetime in SI-GaAs:Cr and EL2-GaAs by pump-probe terahertz spectroscopy | Izvestiya vuzov. Fizika. 2020. № 4. DOI: 10.17223/00213411/63/4/16

The measurement of charge carrier lifetime in SI-GaAs:Cr and EL2-GaAs by pump-probe terahertz spectroscopy

In the present work the temporal dynamics of relaxation of a nonequilibrium concentration of charge carriers in SI-GaAs: Cr and EL2-GaAs semiconductor crystals has been studied using pump-probe terahertz spectroscopy. The obtained experimental data were analyzed taking into account the mechanisms of surface and bulk Shockley-Reed-Hall recombination, radiative recombination, interband and trap assisted Auger recombination. It was found that at injection levels arising upon excitation of samples by laser radiation with a pulse duration of 35 fs and an energy of 0.1 mJ per pulse at a central wavelength of 791 nm, Auger recombination mechanisms have a significant effect. Auger recombination mechanisms make a dominant contribution to the recombination rate of nonequilibrium charge carriers at injection levels above 2×10¹⁸ cm^-3 for SI-GaAs:Cr and above 10¹⁸ cm^-3 for EL2-GaAs. At lower injection levels the bulk and surface Shockley-Reed-Hall recombination are the dominant recombination mechanisms.

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Keywords

терагерцовая pump-probe-спектроскопия, GaAs:Cr, время жизни, оже-рекомбинация, terahertz pump-probe spectroscopy, GaAs:Cr, charge carrier lifetime, Auger recombination

Authors

Name	Organization	E-mail
Kolesnikova I.I.	National Research Tomsk State University	varsharova@mail.ru
Kobtsev D.A.	National Research Tomsk State University	Danbers27@gmail.com
Redkin R.A.	National Research Tomsk State University	ruseg89@mail.ru
Sarkisov S.Y.	National Research Tomsk State University	sarkisoff@yandex.ru
Tolbanov O.P.	National Research Tomsk State University	top@mail.tsu.ru
Tyazhev A.V.	National Research Tomsk State University	antontyazhev@mail.ru

Всего: 6

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