Properties of ZnO:Al, ZnO:Al-SiO₂ films obtained by the zol-gel method from film-forming solutions | Izvestiya vuzov. Fizika. 2020. № 4. DOI: 10.17223/00213411/63/4/55

Properties of ZnO:Al, ZnO:Al-SiO₂ films obtained by the zol-gel method from film-forming solutions

The ZnO, ZnO:Al (5 wt.%) and ZnO:Al (5 wt.%) - SiO₂ (5 wt.%) films were obtained on glass substrates by sol-gel method from ethanol film-forming solutions based on Zn[C₆H₄OHCOO]NO₃, Al (NO₃)₃ ∙ 9H₂O and Si(OC₂H₅)₄. Transmittance in the visible region of the spectrum, resistance, and photocatalytic properties were investigated. It was shown that Al additive have practically no effect on the transmittance of ZnO films in the visible region of the spectrum, but increase the conductivity, reducing the surface resistance to 10⁷ Ω. ZnO: Al-SiO₂ films are the highest transmittance (up to 95%). The addition of SiO₂ does not affect the conductivity of ZnO:Al films. ZnO:Al films have the highest photocatalytic activity. The rate constant for the photodegradation of methyl orange is 1.47×10^-² min^-¹, which is an order of magnitude higher than the rate of decomposition of methyl orange in the presence of a commercial Degussa P25 photocatalyst. The addition of SiO₂ reduces the crystallinity of ZnO:Al films and reduces their photocatalytic activity.

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Keywords

пленки ZnO:Al, ZnO:Al-SiO₂, поверхностное сопротивление, фотокатализ органических красителей, прозрачные пленки, морфология поверхности, ZnO: Al, ZnO: Al-SiO₂ films, surface resistance, photocatalysis of organic dyes, transparent films, surface morphology

Authors

Name	Organization	E-mail
Kuznetsova S.A.	National Research Tomsk State University	onm@mail.tsu.ru
Mal'chik A.G.	Yurginsky Technological Institute (branch) of the National Research Tomsk Polytechnic University	ale-malchik@yandex.ru
Kozik V.V.	National Research Tomsk State University	vkozik@mail.ru

Всего: 3

References

Naghmeh A.G., Mohammad R.I., and Minoo T. // Environ Sci. Pollut Res. - 2017. - V. 24. - P. 12655-12663.

Weilai Y., Jinfeng Zh., and Tianyon P. // Appl. Catalysis B: Environ. - 2016. - V. 181. - P. 220-227.

Ying Zg., Jiabin Zh., Weiquan C., et al. // Appl. Surf. Sci. - 2018. - V. 430. - P. 549-560.

Wang Sh., Kuang P., Cheng B., et al. // J. Alloys and Compounds. - 2018. - V. 741. - P. 622-628.

Савастенко Н.А., Филатова И.И., Люшкевич В.А. и др. // Журн. прикл. спектр. - 2016. - Т. 83. - № 5. - С. 715-723.

Kolodziejczak-Radzimska A. and Jesionowski T. // Materials (Basel). - 2014. - V. 7. - P. 2833- 2881.

Senoussaoui N., Krause M., Müller J., et al. // Thin Solid Films. - 2004. - V. 397. - P. 451-452.

Малютина-Бронская В.В., Залесский В.Б., Семченко А.В., Сидский В.В. // Проблемы физики, математики и техники. - 2018. - № 3 (36). - С. 32-38.

Зарецкая Е.П., Гременок В.Ф., Семченко А.В. и др. // ФТП. - 2015. - T. 49. - Вып. 10. - С. 1297-1303.

Kim D., Yung I., and Kim H. // Current Appl. Phys. - 2010. - V. 10. - No. 3. - P. 459-462.

Xu Z.Q., Deng H., Li Y., et al.// Mater. Res. Bull. - 2006. - V. 41. - No. 2. - P. 354-358.

Светличный В.А., Лапин И.Н. // Изв. вузов. Физика. - 2013. - Т. 56. - № 5. - С. 86-91.

Panatarani C., Fitriyadi S., Balasubramanian N., et al. // Am. Institute of Physics. - 2016. - V. 6. - P. 1-10.

Kunj S. and Sreenivas K.// Current Appl. Phys. - 2016. - V. 16. - No. 7. - P. 748-756.

Shin S. Kim Ch., Lee J.-A., et al. // Ceram. Int. - 2017. - V. 43. - Iss. 14. - P. 11163-11169.

Prashant P., Juan C.A., and Monserrat B. // Int. J. Photoenergy. - 2012. - Article ID 780462. - 7 p.

Guohong Wang, Lin Xu, Jun Zhang, et al. // Int. J. Photoenergy. - 2012. - V. 50. - P. 1-9.

Pal M., Bera S., Sarkar S., and Jana S. // RSC Adv. - 2014. - V. 4. - P. 11552-11563.

Babak Efafi, Seyedeh Soraya Mousavi, Mohammad Hossein Majles Ara, et al. // Mater. Lett. - 2017. - V. 195. - P. 52-54.

Chinta P.V., Lozano O., Wadekar P.V., et al. // J. Electron. Mater. - 2017. - V. 46. - Iss. 4. - P. 2030-2039.

Ваганова Ю.В. Физико-химические закономерности получения осадков и пленок на основе оксида цинка с использованием слабых оснований: дис.. канд. хим. наук. - 2015. - 171 с.

Visser D., Ye Z., Prajapati C.S., and Bhat N.S. // ECS J. Solid State Sci. Technol. - 2017. - V. 6(9). - P. 653-659.

Денисов Н.М., Чубенко Е.Б., Бондаренко В.П., Борисенко В.Е. // ФТП. - 2018. - T. 52. - Bып. 6. - C. 575-580.

Сидский В.В., Семченко А.В., Осипова И.Ю. и др. // Наносистеми, наноматеріали, нанотехнології. - 2014. - Т. 12. - № 1. - C. 65-71.

Монгуш Е.Э., Кузнецова С.А. // Материалы Всерос. науч. конф. с междунар. участием «III Байкальский материаловедческий форум». - Улан-Удэ: Изд-во БНЦ СО РАН, 2018. - Ч. 2. - С. 92.

Ченг Л. Молекулярно-лучевая эпитаксия и гетероструктуры. - М.: Мир, 1989. - 580 с.