Ga2O3 film formed by electrochemical oxidation n-GaAs wafers in galvanostatic mode
The electrical and photoelectric characteristics of Ga2O3/ n -GaAs structures were investigated. Ga2O3 films were formed by electrochemical oxidation (anodization) n -GaAs wafers in galvanostatic mode. The effect of the UV radiation with λ = 222 nm on the Ga2O3/ n -GaAs structures was observed only by the negative gate potential. After thermal annealing of the oxide film the conduction mechanism are saved and the sensitivity of the UV radiation increases.
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Keywords
пленки Ga2O3, GaAs, термический отжиг, УФ-излучение, Ga2O3 film, GaAs, high temperature annealing, UV radiationAuthors
| Name | Organization | |
| Petrova Y.S. | National Research Tomsk State University | petrovays@mail.ru |
| Almaev A.V. | National Research Tomsk State University | almaev_alex@mail.ru |
| Kalygina V.M. | National Research Tomsk State University | kalygina@ngs.ru |
| Taller E.V. | National Research Tomsk State University | lenataller160811@gmail.com |
| Shcherbakov P.S. | National Research Tomsk State University | petruxa77799@gmail.com |
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