Electrophysical studies of ITO films
The paper presents the results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering. It was shown that high-temperature annealing contributes to a significant increase in the ITO films’ electrical conductivity, owing to two processes. First, the high-temperature processing of ITO films after their synthesis promotes a crystalline structure formation, which increases the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes fully electrically active, which leads to an increase in the conduction electrons concentration and to a change in the electrical conductivity mechanism from semiconductor to metal.
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Keywords
пленки ITO, электропроводность, удельное сопротивление, подвижность носителей заряда, концентрация носителей заряда, ITO films, electrical conductivity, resistivity, charge carrier mobility, charge carrier concentrationAuthors
| Name | Organization | |
| Zhidik Yu. S. | Tomsk State University of Control Systems and Radio Electronics; V.E. Zuev Institute of Atmospheric Optics SB RAS | zhidikyur@mail.ru |
| Troyan P.E. | Tomsk State University of Control Systems and Radio Electronics | p.e.troyan@mail.ru |
| Kozik V.V. | National Research Tomsk State University | vkozik@mail.ru |
| Kozyukhin S.A. | National Research Tomsk State University; N.S. Kurnakova Institute of General and Inorganic Chemistry RAS | sergkoz@igic.ras.ru |
| Zabolotskay A.V. | National Research Tomsk State University | salon7878@mail.ru |
| Kuznetsova S.A. | National Research Tomsk State University | onm@chem.tsu.ru |
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