Methods of preparation and temporal stability of GaSe and InSe nanolayers | Izvestiya vuzov. Fizika. 2020. № 9. DOI: 10.17223/00213411/63/9/50

Methods of preparation and temporal stability of GaSe and InSe nanolayers

GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the position of the peaks known for bulk and nanolayered InSe and GaSe samples.

Download file
Counter downloads: 83

Keywords

селенид индия, селенид галлия, нанослои, квазидвумерный полупроводник, осаждение из паровой фазы, морфология поверхности, спектр комбинационного рассеяния, gallium selenide, indium selenide, nanolayers, quasi-two-dimensional semiconductor, physical vapor deposition, surface morphology, Raman spectrum

Authors

NameOrganizationE-mail
Redkin R.A.National Research Tomsk State Universityruseg89@mail.ru
Kobtsev D.A.National Research Tomsk State UniversityDanbers27@gmail.com
Bereznaya S.A.National Research Tomsk State Universitynlo.atom@mail.ru
Korotchenko Z.V.National Research Tomsk State Universityzvk.07@mail.ru
Novikov V.A.National Research Tomsk State Universitynovikovvadim@mail.ru
Sarkisov S.Y.U.National Research Tomsk State Universitysarkisov@mail.tsu.ru
Всего: 6

References

Hu P., Wen Z., Wang L., et al. // ACS Nano. - 2012. - V. 6. - P. 5988-5994.
Lei S., Ge L., Liu Z., et al. // Nano Lett. - 2013. - V. 13. - P. 2777-2781.
Jie W., Chen X., Li D.б et al. // Angew. Chem. Int. Edit. - 2015. - V. 54. - P. 1185-1189.
Zhou X., Cheng J., Zhou Y.б et al. // J. Am. Chem. Soc. - 2015. - V. 137. - P. 7994-7997.
Karvonen L., Säynätjoki A., Mehravar S.б et al. // Sci. Rep. - 2015. - V. 5. - P. 10334 (8 p).
Zhou Y., Nie Y., Liu Y.б et al. // ACS Nano. - 2014. - V. 8. - P. 1485-1490.
Del Pozo-Zamudio O., Schwarz S., Klein J., et al. // 2D Materials. - 2015. - V. 2. - P. 1-6.
Mahjouri-Samani M., Gresback R., Tian M., et al. // Adv. Functional Mater. - 2014. - V. 24. - P. 6365-6371.
Kosobutsky A.V. and Sarkisov. S.Y. // Phys. Solid State. - 2018. - V. 60. - P. 1686-1690.
Bandurin D.A., Tyurnina A.V., Yu G.L., et al. // Nature Nanotechnol. - 2017. - V. 12. - P. 223-227.
Sarkisov S.Yu., Kosobutsky A.V., and Shandakov S.D. // J. Solid State Chem. - 2015. - V. 232. - P. 67-72.
Sarkisov. S.Y., Kosobutsky A.V., Brudnyi V.N., et al. // Phys. Solid State. - 2015. - V. 57. - P. 1735-1740.
Brudnyi V.N., Sarkisov S.Yu., and Kosobutsky A.V. // Semicond. Sci. Technol. - 2015. - V. 30. - P. 115019 (9 p).
Bereznaya S.A., Korotchenko Z.V., Redkin R.A., et al. // J. Opt. - 2017. - V. 19. - P. 115503 (7 p).
Redkin R.A., Kobtsev D.A., Bereznaya S.A., et al. // Mater. Res. Express. - 2019. - V. 6. - P. 26201 (7 p).
Bereznaya S.A., Korotchenko Z.V., Novikov V.A., et al. // Infrared Phys. Techn. - 2016. - V. 76. - P. 126-130.
 Methods of preparation and temporal stability of GaSe and InSe nanolayers | Izvestiya vuzov. Fizika. 2020. № 9. DOI: 10.17223/00213411/63/9/50

Methods of preparation and temporal stability of GaSe and InSe nanolayers | Izvestiya vuzov. Fizika. 2020. № 9. DOI: 10.17223/00213411/63/9/50