Features of high-intensity implantation of low energy ions
The present article is devoted to numerical modeling and experimental studies aimed at determining the real temperatures of the surface and near-surface layers of various materials depending on the regimes of high-intensity ion irradiation. The integral temperature of the target was measured using an electrically isolated thermocouple. To measure the dynamic change in local temperature on the irradiated surface of the target, a high-temperature pulsed pyrometer KLEIBER 740-LO was used. The contribution of the shock-wave mechanism to the mass transfer of the implantable dopant during high-intensity ion irradiation and the regularities of implantable dopant accumulation during hot high-intensity ion implantation were studied.
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Authors
| Name | Organization | |
| Ryabchikov A.I. | National Research Tomsk Polytechnic University | ralex@tpu.ru |
| Ivanova A.I. | National Research Tomsk Polytechnic University | bai@tpu.ru |
| Korneva O.S. | National Research Tomsk Polytechnic University | oskar@tpu.ru |
| Sivin D.O. | National Research Tomsk Polytechnic University | sivin@tpu.ru |
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