Modification of the surface of materials by boron ions based on discharge systems of vacuum arc and planar magnetron | Izvestiya vuzov. Fizika. 2020. № 10. DOI: 10.17223/00213411/63/10/166

Modification of the surface of materials by boron ions based on discharge systems of vacuum arc and planar magnetron

The principle of operation and the characteristics of the experimental equipment developed for the generation of plasma and beam of boron ions is presented. There are a source of boron ions based on a vacuum arc with the separation of boron isotopes in a magnetic field and a plasma generator for boron-containing coatings based on a planar magnetron sputter. Common to this equipment is the use of cathodes made of lanthanum hexaboride, but for planar magnetron, a pure boron cathode heated in the discharge was also used. It was shown that, when silicon wafer is implanted with beams of ¹⁰B⁺ and ¹¹B⁺ boron isotope ions with doses of 10¹⁴-10¹⁶ ion/cm², the isotopic effect of the diode properties of the implanted surface is observed. The results of studies of the properties of the obtained boron-containing coatings on model materials: stainless steel, crystal silicon and reactor alloy E110 (Zr-1Nb) are presented.

Download file

Counter downloads: 108

Keywords

Authors

Name	Organization	E-mail
Bugaev A.S.	Institute of High Current Electronics SB RAS	bugaev@opee.hcei.tsc.ru
Vizir A.V.	Institute of High Current Electronics SB RAS	vizir@opee.hcei.tsc.ru
Gushenets V.I.	Institute of High Current Electronics SB RAS	gvi@opee.hcei.tsc.ru
Nikolaev A.G.	Institute of High Current Electronics SB RAS	nik@opee.hcei.tsc.ru
Nikonenko A.V.	Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics	alisa_nikonenko_1995@mail.ru
Oks E.M.	Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics	oks@opee.hcei.tsc.ru
Savkin K.P.	Institute of High Current Electronics SB RAS	savlin@opee.hcei.tsc.ru
Frolova V.P.	Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics	frolova_valeriya_90@mail.ru
Shandrikov M.V.	Institute of High Current Electronics SB RAS	shandrikov@opee.hcei.tsc.ru
Yushkov G.Y.	Institute of High Current Electronics SB RAS	gyushkov@mail.ru

Всего: 10

References

Polo M.C., Martinez E., Esteve J., and Andujar J.L. // Diam. Relat. Mater. - 1999. - V. 8. - P. 423-427.

Eaglesham D.J., Stolk P.A.,Gossmann H.J., and Poate J.M. // Appl. Phys. Lett. - 1994. - V. 65. - P. 2305-2307.

Schlemm H. and Roth D. // Surf. Coat. Technol. - 1999. - V. 114. - P. 81-48.

Freeman J.H. // Nucl. Instrum. Methods. - 1963. - V. 22.- P. 306-316.

Williams J.M., Klepper C.C., Chivers D.J., et al. // J. Vacuum Sci. Technol. - 2008. - V. 26. - P. 368-372.

Nikolaev A.G., Oks E.M., Vizir A.V., et al. // Rev. Sci. Instrum. - 2016. - V. 87. - P. 02A902.

Nikolaev A.G., Oks E.M., Frolova V.P., et al. // Tech. Phys. Lett. - 2015. - V. 41. - P. 880-883.

Yushkov G.Y., Savkin K.P., Oks E.M., et al. // IEEE Trans. Plasma Sci. - 2013. - V. 41. - P. 1923-1928.

Garcia-Valenzuela J.A., Rivera R., Morales-Vilches A.B., et al. // Thin Solid Films. - 2016. - V. 619. - P. 288-296.

Gushenets V.I., Oks E.M., Savkin K.P., et al. // Rev. Sci. Instrum. - 2010. - V. 81. - P. 02B303.

Золотухин Д.Б., Климов А.С., Савкин К.П. и др. // Изв. вузов. Физика. - 2015. - T. 58. - № 9/3. - C. 106-109.

Месяц Г.А. Эктоны в вакуумном разряде: пробой, искра, дуга. - М.: Наука, 2000.