Aluminum nitride doped with transition metal group atoms as a material for spintronics
The overview of scientific literature on electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on literature sources published mainly in the last 10 years. The doping was carried out by different methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and it is a promising material for spintronics.
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Keywords
Curie temperature, magnetic properties, aluminum nitrideAuthors
| Name | Organization | |
| Khludkov S.S. | National Research Tomsk State University | knludkov@sibmail.com |
| Prudaev I.A. | National Research Tomsk State University | funcelab@gmail.com |
| Root L.O. | National Research Tomsk Polytechnic University | tolbanowa@tpu.ru |
| Tolbanov O.P. | National Research Tomsk State University | top@mail.tsu.ru |
| Ivonin I.V. | National Research Tomsk State University | iiv@phys.tsu.ru |
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