Formation of nanoscale T-shaped gates using directional angular deposition of thin aluminum films
This paper presents the technology of fabrication T -shaped gates of GaAs transistors using optical lithography and uniquemethod of directional angular deposition of thin aluminum films. Minimal foot length of T -shaped gate formed using developed technology was Lg = 25 nm. GaAs HEMT with a T -shaped gate formed using angular directional deposition demonstrated the drain-source saturation current I dss = 140 mA/mm, the gate-drain breakdown voltage Ugdbreak = 9 V, voltage cutoff Ucoff = 2 V.
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Keywords
nanoscale, GaAs-transistor, T-shaped gates, angular deposition, thin filmsAuthors
| Name | Organization | |
| Kulinich I.V. | Tomsk State University of Control Systems and Radioelectronics | kulinich@tusur.ru |
| Kazimirov A.I. | Tomsk State University of Control Systems and Radioelectronics | smart300389@mail.ru |
| Shesterikov E.V. | Tomsk State University of Control Systems and Radioelectronics | shesterikov@tusur.ru |
References
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Chang H.C., Lee C.S., Chen S.H., et al. // J. Electron. Mater. - 2003. - V. 33. - No. 7. - P. 15-17.
