Effect of an electric field on photoconductivity in p-GaSe single crystals

Under various external and intracrystalline conditions (at different temperatures, electric field strengths, initial values of the dark resistivity of the sample, content, as well as the chemical nature of the introduced rare-earth impurity), we studied the effect of a galvanically applied electric field on intrinsic photoconductivity in gallium selenide single crystals ( p -GaSe). It was established that the photoconductivity in the samples of undoped p-GaSe single crystals with the initial (occurring at 77 K) dark resistivity ρ_т0 £ 4·10⁴ Ohm·cm and doped with rare-earth elements (dysprosium and erbium) with a percentage of N _REE ≥10^-2 at. % independent, and in the samples of single crystals undoped with ρ_т0 > 10⁵ Ohm·cm and doped with N _REE < 10^-2 at. % at Т £ 250 K and low illumination it depends on the electric field strength. The detected effect of the electric field on the photoconductivity in the studied samples of p -GaSe single crystals is explained by the electrical rectification of fluctuations in the electronic potential of free energy bands due to the presence of random macroscopic defects in them.

Keywords

Authors

References