Influence of implantation doses on the phase composition of UFG-titanium
Research on samples of technically pure titanium BT1-0 in UFG state formed by combined method of multiple single axis pressing (abc-pressing), then deformed by multipass rolling in stream rolls at room temperature and further annealed at 573 K, 1 hour is conducted. Then the samples of BT1-0 alloy were additionally annealed at 573 K, 1 hour. These samples were then ionically implanted with aluminum ions at 1×1017, 5×1017 and 10×1017 ion/cm2. The samples were studied in four states: 1) Prior to implantation (samples annealed at 573 K, 1 hour) - the initial state (IS); 2) IS + implantation with aluminum ions by a dose of 1×1017 ions/cm2; 3) IS + implantation with aluminum ions by a dose of 5×1017 ions/cm2; 4) IS + implantation with aluminum ions by a dose of 10×1017 ions/cm2. Researches are executed by methods of X-ray structure analysis, raster electronic microscopy with energy dispersion analysis and transmission diffraction electronic microscopy. For the analysis of the chemical composition of the implanted layer the method of WEEE-spectroscopy was used. The longitudinal and transverse grain sizes and phase composition of the alloy depending on the irradiation dose were determined. It is established that implantation leads to formation of intermetallic phases of Al3Ti and AlTi3, titanium and aluminum oxides Al2O3. Increasing the irradiation dose increases the thickness of the implanted layer without changing its phase composition.
Keywords
titanium, structure, annealing, phase, abc-pressing, implantation, aluminum, electron microscopyAuthors
Name | Organization | |
Nikonenko A.V. | Tomsk State University of Control Systems and Radioelectronics | aliska-nik@mail.ru |
Popova N.A. | Tomsk State University of Architecture and Building | natalya-popova-44@mail.ru |
Nikonenko E.L. | Tomsk State University of Architecture and Building; National Research Tomsk Polytechnic University | vilatomsk@mail.ru |
Kalashnikov M.P. | Institute of Strength Physics and Materials Science SB RAS | kmp1980@mail.ru |
Kurzina I.A. | National Research Tomsk State University | kurzina99@mail.ru |
Oks E.M. | Tomsk State University of Control Systems and Radioelectronics | oks@fet.tusur.ru |
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