Structure and properties of the surface layer of zirconium-niobium alloy subjected to high-dose implantation with 10B+ boron isotope ions
The creation of layers implanted with boron isotope 10B on the elements of the core of a nuclear reactor can, due to the anomalously large neutron capture cross-section, provide a decrease in the reactivity of the reactor at the beginning of the company for its operation. The aim of this work is to study the effect of high-dose implantation with 10B + boron isotope ions (ion energy 22 keV, exposure doses from 1×1016 to 7×1016 ion/cm2) on the structure and properties of the surface of E110 alloy samples. It was found that implantation with 10B+ boron ions with an energy of 22 keV at a dose of 7×1016 ions/cm2 leads to an increase in the surface microhardness from 3 GPa for the initial one to 3.7 GPa for the implanted sample. It was found that the corrosion rate of E110 alloy samples in 1% HF solution after implantation (ion energy 10B + 22 keV, dose 7×1016 ion/cm2) is 1.2-1.4 times lower than for the initial alloy. It is shown that the implantation of the E110 alloy with 10B + boron ions is accompanied by the formation of a subgrain structure with dimensions 100-200 nm in the surface layer, an increase in the scalar dislocation density, and the release of nanosized 1.8-2.3 nm zirconium boride particles.
Keywords
zirconium-niobium alloy, boron isotope ions 10B+, ion implantation, phase composition, defective substructureAuthors
Name | Organization | |
Ivanov Yu.F. | Institute of High Current Electronics SB RAS | fi55@mail.ru |
Frolova V.P. | Institute of High Current Electronics SB RAS; Tomsk State University of Control Systems and Radioelectronics | frolova_valeriya_90@mail.ru |
Bugaev A.S. | Institute of High Current Electronics SB RAS | bugaev@opee.hcei.tsc.ru |
Kadlubovich B.E. | Tomsk Regional Institute of Advanced Training and Retraining of Educators | kbe@tpu.ru |
Nikolaev A.G. | Institute of High Current Electronics SB RAS | nik@opee.hcei.tsc.ru |
Petrikova E.A. | Institute of High Current Electronics SB RAS | petrikova@opee.hcei.tsc.ru |
Tolkachev O.S. | Institute of High Current Electronics SB RAS | ole.ts@mail.ru |
Yushkov G.Yu. | Institute of High Current Electronics SB RAS | gyushkov@mail.ru |
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