The influence of thermal annealing on terahertz dielectric properties of ZnGeP2 crystals | Izvestiya vuzov. Fizika. 2021. № 8. DOI: 10.17223/00213411/64/8/122

The influence of thermal annealing on terahertz dielectric properties of ZnGeP2 crystals

The influence of thermal annealing on the dielectric properties of ZnGeP2 crystals in the terahertz frequency range has been studied by terahertz time domain spectroscopy. The effect of «transformation» of a positive birefringent crystal ZnGeP2 into a negative one has been discovered upon transition from IR to the terahertz frequency range. A decrease in absorption coefficients and refractive indices in the frequency range of 0.25-2.5 THz after annealing of the crystals at temperatures of 575-700 °C for 300-400 hours has also been found.

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Keywords

terahertz time-domain spectroscopy, ZnGeP2, thermal annealing, refractive index

Authors

NameOrganizationE-mail
Voevodin V.I.National Research Tomsk State Universityvoevodinvova2013@yandex.ru
Yudin N.N.National Research Tomsk State University; «Laboratory for Optical Crystals» Ltdrach3@yandex.ru
Sarkisov S.Y.National Research Tomsk State Universitysarkisoff@yandex.ru
Всего: 3

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 The influence of thermal annealing on terahertz dielectric properties of ZnGeP<sub>2</sub> crystals | Izvestiya vuzov. Fizika. 2021. № 8. DOI: 10.17223/00213411/64/8/122

The influence of thermal annealing on terahertz dielectric properties of ZnGeP2 crystals | Izvestiya vuzov. Fizika. 2021. № 8. DOI: 10.17223/00213411/64/8/122