Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth | Izvestiya vuzov. Fizika. 2021. № 9. DOI: 10.17223/00213411/64/9/3

Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth

Two-dimensional materials have become one of the central research topics of scientists around the world after the production of graphene - a monatomic layer of carbon. Currently, two-dimensional crystals are among the most promising materials for next-generation nanoelectronics and photonics. The exploration of the feasibility of 2D materials devices causes a deeper insight into the physical properties of these new materials and provides a starting point for the development of a number of important practical areas. Over the past few years, researchers have been attracting increased attention from graphene-like materials of group IVA elements, such as silicene (Si), germanene (Ge), stanene (Sn), and plumbene (Pb). Experimental production and study of the unique properties of two-dimensional monatomic layers of carbon, silicon, germanium, tin and lead on various substrates created the prerequisites for the development of new generation devices based on them. The wide possibilities for controlling their exotic electronic, magnetic and optical properties through the choice of the substrate, the design and geometry of the two-dimensional layer, as well as by controlling the magnitude of elastic stresses, have made them a dominating topic for studying in the field of nanotechnology and materials sciences. This paper reviews the latest advances in growing silicene, germanene, stanene, and plumbene using epitaxial methods. Growth technologies for creation of high-quality two-dimensional structures of large area required for promising instrumentation area are considered in more details.

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Keywords

2D crystal, silicon, germanium, tin, lead, silicene, germanene, stanene, plumbene, molecular beam epitaxy

Authors

NameOrganizationE-mail
Lozovoy K.A.National Research Tomsk State Universitylka@sibmail.com
Dirko V.V.National Research Tomsk State Universityvovenmir@gmail.com
Vinarskiy V.P.National Research Tomsk State Universityvinarskiy2017@gmail.com
Kokhanenko A.P.National Research Tomsk State Universitykokh@mail.tsu.ru
VoItsekhovskiI A.V.National Research Tomsk State Universityvav43@mail.tsu.ru
Akimenko N.Y.Pacific National Universityn_akimenko@inbox.ru
Всего: 6

References

Yung K.C., Wu W.M., Pierpoint M.P., and Kusmartsev F.V. // Contemporary Phys. - 2013. - V. 54. - P. 233-251.
Ezawa M. and Le Lay G. // New J. Phys. - 2015. - V. 17. - P. 090201 (1-3).
Пономаренко В.П., Попов В.С., Попов С.В., Чепурнов Е.Л. // Успехи прикладной физики. - 2019. - Т. 7. - С. 10-48.
Li X., Tao L., Chen Z., et al. // Appl. Phys. Rev. - 2017. - V. 4. - P. 021306 (1-31).
Molle A., Goldberger J., Houssa M., et al. // Nature Mater. - 2017. - V. 16. - P. 163-169.
Novoselov K.S., Geim A.K., Morozov S.V., et al. // Science. - 2004. - V. 306. - P. 666-669.
Acun A., Zhang L., Bampoulis P., et al. // J. Phys.: Cond. Matter. - 2015. - V. 27. - P. 443002 (1-11).
Tao L., Cinquanta E., Chiappe D., et al. // Nature Nanotechnol. - 2015. - V. 10. - P. 227-231.
Houssa M., van den Broek B., Iordanidou K., et al. // Nano Research. - 2016. - V. 9. - P. 774-778.
Mortazavi B., Dianat A., Cuniberti G., and Rabczuk T. // Electrochim. Acta. - 2016. - V. 213. - P. 865-870.
Garg P., Choudhuri I., and Pathak B. // Phys. Chem. Chem. Phys. - 2017. - V. 19. - P. 31325-31334.
Liao M., Zang Y., Guan Z., et al. // Nature Phys. - 2018. - V. 14. - P. 344-348.
Cahangirov S. Lecture Notes in Physics. - Springer, 2016. - 96 p.
Takeda K. and Shiraishi K. // Phys. Rev. B. - 1994. - V. 50. - P. 916-922.
Guzman-Veri G.G. and Lew Yan Voon L.C. // Phys. Rev. B. - 2007. - V. 76. - P. 075131 (1-10).
Molle A., Grazianetti C., Tao L., et al. // Chem. Soc. Rev. - 2018. - V. 47. - P. 6370-6387.
Jose D. and Datta A. // Phys. Chem. Chem. Phys. - 2011. - V. 13. - P. 7304-7311.
Houssa M., Dimoulas A., and Molle A. // J. Phys.: Cond. Matter. - 2015 - V. 27. - P. 253002 (1-19).
Le Lay G. // Nature Nanotechnol. - 2015. - V. 10. - P. 202-203.
Vogt P., De Padova P., Quaresima C., et al. // Phys. Rev. Lett. - 2012. - V. 108. - P. 155501 (1-5).
Lin C.-L., Arafune R., Kawahara K., et al. // Appl. Phys. Express. - 2012. - V. 5. - P. 045802 (1-3).
Ezawa M. // J. Phys. Soc. Jpn. - 2015. - V. 84. - P. 121003 (1-11).
Balendhran S., Walia S., Nili H., et al. // Small. - 2015. - V. 11. - P. 640-652.
Meng L., Wang Y., Zhang L., et al. // Nano Lett. - 2013. - V. 13. - P. 685-690.
Jamgotchian H., Colignon Y., Hamzaoui N., et al. // J. Phys.: Cond. Matter. - 2012. - V. 24. - P. 172001 (1-7).
Fleurence A., Friedlein R., Ozaki T., et al. // Phys. Rev. Lett. - 2012. - V. 108. - P. 245501 (1-5).
Chiappe D., Scalise E., Cinquanta E., et al. // Adv. Mater. - 2014. - V. 26. - P. 2096-2101.
Aizawa T., Suehara S., and Otani S. // J. Phys. Chem. C. - 2014. - V. 118. - P. 23049-23057.
Huang L., Zhang Y., Zhang Y.-Y., et al. // Nano Lett. - 2017. - V. 17. - P. 1161-1166.
De Crescenzi M., Berbezier I., Scarselli M., et al. // ACS Nano. - 2016. - V. 10. - P. 11163-11171.
Cahangirov S., Topsakal M., Akturk E., et al. // Phys. Rev. Lett. - 2009. - V. 102. - P. 236804 (1-4).
Derivaz M., Dentel D., Stephan R., et al. // Nano Lett. - 2015. - V. 15. - P. 2510-2516.
Zhang L., Bampoulis P., Rudenko A.N., et al. // Phys. Rev. Lett. - 2016. - V. 116. - P. 256804 (1-6).
Davila M.E. and Le Lay G. // Sci. Rep. - 2016. - V. 6. - P. 20714 (1-9).
Davila M.E., Xian L., Cahangirov S., et al. // New J. Phys. - 2014. - V. 16. - P. 095002 (1-11).
Li L., Lu S., Pan J., et al. // Adv. Mater. - 2014. - V. 26. - P. 4820-4824.
d’Acapito F., Torrengo S., Xenogiannopoulou E., et al. // J. Phys.: Cond. Matter. - 2016. - V. 28. - P. 045002 (1-8).
Webb R. // New Scientist. - 2014. - V. 224. - P. 38-39.
Gross M. // Chem. Industry. - 2014. - V. 78. - P. 24-27.
Sahoo S.K. and Wei K.-H. // Adv. Mater. Interfac. - 2019. - V. 6. - P. 1900752 (1-14).
Zhu F., Chen W., Xu Y., et al. // Nature Mater. - 2015. - V. 14. - P. 1020-1025.
Gou J., Kong L., Li H., et al. // Phys. Rev. Mater. - 2017. - V. 1. - P. 054004 (1-6).
Xu C.-Z., Chan Y.-H., Chen P., et al. // Phys. Rev. B. - 2018. - V. 97. - P. 035122 (1-5).
Yuhara J., Fujii Y., Nishino K., et al. // 2D Materials. - 2018. - V. 5. - P. 025002 (1-8).
Yuhara J., He B., Matsunami N., et al. // Adv. Mater. - 2019. - V. 31. - P. 1901017 (1-6).
Yuhara J. and Le Lay G. // Jpn. J. Appl. Phys. - 2020. - V. 59. - P. SN0801 (1-6).
Bihlmayer G., Sassmannshausen J., Kubetzka A., et al. // Phys. Rev. Lett. - 2020. - V. 124. - P. 126401.
Stepniak-Dybala A., and Krawiec M. // J. Phys. Chem. C. - 2019. - V. 123. - P. 17019-17025.
Deng J., Xia B., Ma X., et al. // Nature Mater. - 2018. - V. 17. - P. 1081-1086.
Chen K.-C., Lee L.-M., Chen H.-A., et al. // Semicond. Sci. Technol. - 2019. - V. 34. - P. 105020 (1-7).
Pang W., Nishino K., Ogikubo T., et al. // Appl. Surf. Sci. - 2020. - V. 517. - P. 146224 (1-6).
Liu Y., Zhang S., He J., et al. // Nano-Micro Lett. - 2019. - V. 11. - P. 13 (1-24).
Grazianetti C. Martella C., and Molle A. // Phys. Status Solidi RRL. - 2020. - V. 14. - P. 1900439 (1-11).
John R. and Merlin B. // J. Phys. Chem. Solids. - 2017. - V. 110. - P. 307-315.
Mukhopadhyay T., Mahata A., Adhikari S., and Asle Zaeem M. // Sci. Rep. - 2017. - V. 7. - P. 15818 (1-13).
Shi Z. and Singh C.V. // Nanoscale. - 2017. - V. 9. - P. 7055-7062.
Shubham and Swarup A. // Comput. Cond. Matter. - 2018. - V. 14. - P. 84-88.
Lew Yan Voon L.C., Zhu J., and Schwingenschlogl U. // Appl. Phys. Rev. - 2018. - V. 3. - P. 040802 (1-13).
Tokmachev A.M., Averyanov D.V., Parfenov O.E., et al. // Nature Commun. - 2018. - V. 9. - P. 1672 (1-9).
Cheng H.-P., Liu S., Chen X., et al. // AVS Quantum Sci. - 2020. - V. 2. - P. 027101 (1-19).
Parfenov O.E., Averyanov D.V., Tokmachev A.M., et al. // Adv. Functional Mater. - 2020. - V. 30. - P. 1910643 (1-8).
Kort-Kamp W.J.M. // Phys. Rev. Lett. - 2017. - V. 119. - P. 147401 (1-5).
Yu X.-L. and Wu J. // PCCP. - 2018. - V. 20. - P. 2296-2307.
Zhai X., Wen R., Zhou X., et al. // Phys. Rev. Appl. - 2019. - V. 11. - P. 064047 (1-10).
Liu C., Kim H.S., Won M., et al. // Matter. - 2020. - V. 3. - P. 12-13.
Nakano H., Tetsuka H., Spencer M., and Morishita T. // Sci. Technol. Adv. Mater. - 2018. - V. 19. - P. 76-100.
Pang Z.-X., Wang Y., Ji W.-X., et al. // Physica E: Low-dimensional Systems and Nanostructures. - 2020. - V. 120. - P. 114095 (1-5).
Лозовой К.А., Коханенко А.П., Акименко Н.Ю. и др. // Изв. вузов. Физика. - 2020. - Т. 63. - № 2. - С. 104-109.
Lozovoy K.A., Korotaev A.G., Kokhanenko A.P., et al. // Surf. Coat. Technol. - 2020. - V. 384. - P. 125289 (1-5).
Lozovoy K.A., Zhou Y., Smith R., et al. // Thin Solid Films. - 2020. - V. 713. - P. 138363 (1-5).
 Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth | Izvestiya vuzov. Fizika. 2021. № 9. DOI: 10.17223/00213411/64/9/3

Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth | Izvestiya vuzov. Fizika. 2021. № 9. DOI: 10.17223/00213411/64/9/3