Influence of line-by-line processing technology on the optical breakthreshold of a ZnGeP2 single crystal | Izvestiya vuzov. Fizika. 2021. № 11. DOI: 10.17223/00213411/64/11/102

Influence of line-by-line processing technology on the optical breakthreshold of a ZnGeP2 single crystal

The threshold of optical breakdown of a ZnGeP2 single crystal manufactured by LOK LLC, Russia, was determined, which was W0d =1.8 J / cm2, and the threshold of optical breakdown of a crystal manufactured by Harbin Institute of Technology, China, was also measured, which was W0d =2.1 J/cm2 (at a wavelength of 2,097 microns of laser radiation and a pulse repetition frequency of 10 kHz with a pulse duration of 35 ns).The effect of post-processing of ZnGeP2 single crystals (polishing of working surfaces )is investigated, application of antireflection interference coatings) to the threshold of optical breakdown of the surface of these crystals. It is established that the presence of silicon conglomerates in the interference antireflection coating leads to a decrease in the optical breakdown threshold.

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Keywords

optical breakdown threshold, ZnGeP2, nonlinear optics

Authors

NameOrganizationE-mail
Yudin N.N.National Research Tomsk State University; LLC "Laboratory of Optical Crystals"; Institute of Atmospheric Optics named after V.E. Zuev SB RASrach3@yandex.ru
Antipov O.L.Institute of Applied Physics RASantipov@ipfran.ru
Gribenyukov A.I.National Research Tomsk State University; LLC "Laboratory of Optical Crystals"alexander.gribenyukov@yandex.ru
Dyomin V.V.National Research Tomsk State Universitydyomin@mail.tsu.ru
Zinoviev M.M.National Research Tomsk State University; LLC "Laboratory of Optical Crystals"; Institute of Atmospheric Optics named after V.E. Zuev SB RASmixxxan_08@mail.ru
Podzivalov S.N.National Research Tomsk State University; LLC "Laboratory of Optical Crystals"cginen@yandex.ru
Slyunko E.S.National Research Tomsk State University; LLC "Laboratory of Optical Crystals"elenohka266@mail.ru
Zhuravleva E.V.National Research Tomsk State Universitylenazhura@mail.ru
Pfeif A.A.National Research Tomsk State Universitynastya.pfayff17@mail.ru
Yudin N.A.National Research Tomsk State University; Institute of Atmospheric Optics named after V.E. Zuev SB RASyudin@tic.tsu.ru
Kulesh M.M.National Research Tomsk State Universitykyleschmm2000@yandex.ru
Moskvichev E.N.National Research Tomsk State Universityem_tsu@mail.ru
Всего: 12

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 Influence of line-by-line processing technology on the optical breakthreshold of a ZnGeP<sub>2</sub> single crystal | Izvestiya vuzov. Fizika. 2021. № 11. DOI: 10.17223/00213411/64/11/102

Influence of line-by-line processing technology on the optical breakthreshold of a ZnGeP2 single crystal | Izvestiya vuzov. Fizika. 2021. № 11. DOI: 10.17223/00213411/64/11/102