Results of double doping of a narrow-band PbS semiconductor with manganese and copper impurities: EPR study data

The parameters of spin Hamiltonians and the shapes of the resonance lines of the Cu²⁺ and Mn²⁺ impurity centers that replace Pb²⁺cations in the PbS crystal are determined by the EPR method at temperatures of 4.2 K and 300 K. It is established that in the process of growing by the Bridgman method, randomly oriented microcrystalline inclusions are formed in doped Pb_1-x-yCu_xMn_yS crystals, which contain most of the impurity ions Cu²⁺ and Mn²⁺ in their volumes. It turned out that the values of the g-factor and the parameters of the hyperfine structure of Mn²⁺ ions depend on the concentration of impurity copper, and this fact is explained by the acceptor role of this impurity.

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