Effect of Be co-doping on the anisotropy of magnetoresistance in GaMnAs epitaxial layers
The effect of Be co-doping on the anisotropy of magnetoresistance in GaMnAs grown via low-temperature molecular beam epitaxy has been investigated. The anisotropy of magnetoresistance in GaMnAs:Be in the range of fields up to 2000 Oe along the [110] and [110] crystal axes has been observed. This anisotropy manifests itself in different character of the temperature dependence of value of magnetoresistance and it can be result of occurrence of spatially oriented structures in the GaMnAs that emerge in the bulk of the epitaxial layer during growth.
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Keywords
anisotropy, negative magnetoresistance, epitaxial layers, ferromagnetic ordering, GaMnAs:BeAuthors
| Name | Organization | |
| Parchinskiy P.B. | National University of Uzbekistan | pavelphys@mail.ru |
| Gazizulina A.S. | National University of Uzbekistan | alice.galashina@gmail.com |
| Nasirov A.A. | National University of Uzbekistan | aanasirov1962@mail.ru |
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