Multi-element nitride coatings of quasi-equiatomic composition synthetized by the ion-plasma method
Multi-element nitride coatings of quasi-equiatomic composition (NbMoCrTiAl)N and (NbZrCu-TiAl)N are synthesized by deposition on a substrate in vacuum from a multicomponent gas-metal plasma. This plasma was generated by simultaneous independent vacuum-arc evaporation of the cathodes of the selected elements in the regime with plasma assistance in a nitrogen atmosphere. It has been established that the synthesized coatings are single-phase materials with a face-centered cubic crystal lattice. For the coating composition (NbZrCuTiAl)N, the crystal lattice parameter was a = 0.44288 nm, and for (NbMoCrTiAl)N it was a = 0.40540 nm. The formed nitride coatings have a nanocrystalline multilayer structure. The microhardness of the coatings depends on the concentration and type of chemical elements, nitrogen pressure in gas-metal plasma. The microhardness reaches 43 GPa for the (NbMoCrTiAl)N coating and 46.5 GPa for the (NbZrCuTiAl)N coating.
Keywords
nitride coatings,
quasi-equiatomic elemental composition,
vacuum-arc plasma-assisted method,
deposition,
structure,
microhardnessAuthors
| Ivanov Yu.F. | Institute of high current electronics of SB RAS | yufi55@mail.ru |
| Akhmadeev Yu.H. | Institute of high current electronics of SB RAS | ahmadeev@opee.hcei.tsc.ru |
| Koval N.N. | Institute of high current electronics of SB RAS | koval@opee.hcei.tsc.ru |
| Shugurov V.V. | Institute of high current electronics of SB RAS | shugurov@opee.hcei.tsc.ru |
| Petrikova E.A. | Institute of high current electronics of SB RAS | elizmarkova@yahoo.com |
| Krysina O.V. | Institute of high current electronics of SB RAS | krysina@opee.hcei.tsc.ru |
| Prokopenko N.A. | Institute of high current electronics of SB RAS | nick08_phantom@mail.ru |
| Tolkachev O.S. | Institute of high current electronics of SB RAS | ole.ts@mail.ru |
Всего: 8
References
Cantor B., Chang I.T.H., Knight P., Vincent A.J.B. // Mater. Sci. Eng. A. - 2004. - V. 375-377. - P. 213-218.
Yeh J.W. // Adv. Eng. Mater. - 2004. - V. 6. - P. 299-303.
Oates W.A. //j. Phase Equilibria and Diffusion. - 2007. - V. 28. - P. 79-89.
Погребняк А.Д., Багдасарян А.А., Якущенко И.В., Береснев В.М. // Успехи химии. - 2014. - Т. 83. - № 11. - С. 1027-1061.
Miracle D.B., Senkov O.N. // Acta Mater. - 2017. - V. 122. - Р. 448-511.
Chen H., Kauffmann A., Gorr B., et al. //j. Alloys Compd. - 2016. - V. 661. - P. 206-215.
Senkov O.N., Wilks G.B., Scott J.M., Miracle D.B. // Intermetallics. - 2011. - V. 19. - P. 698-706.
Senkov O.N., Scott J.M., Senkova S.V., et al. //j. Alloys Compd. - 2011. - V. 509. - P. 6043-6048.
Guo N.N., Wang L., Luo L.S., et al. // Mater. Design. - 2015. - V. 81. - P. 87-94.
Senkov O.N., Senkova S.V., Miracle D.B., Woodward C. // Mater. Sci. Eng.: A. - 2013. - V. 565. - P. 51-62.
Rong Z., Wang C., Wang Y., Dongetal M. //j. Alloys Compd. - 2022. - V. 921. - P. 166061.
Ma Y., Peng G.J., Ven D.H., Zhang T.H. // Mater. Sci. Eng. A. - 2015. - V. 621. - P. 111-117.
Wang L.M., Chen G.G., Yeh J.W., Ke S.T. // Mater. Chem. Phys. - 2011. - V. 126. - P. 880-885.
Hui Z., Wu W., He Y., et al. // Appl. Surf. Sci. - 2015. - V. 36. - P. 543-547.
Gao W.Y., Chang C., Li G., et al. // Optic. - 2019. - V. 178. - P. 950-957.
Фетисов Г.В. Синхротронное излучение. Методы исследования структуры веществ / под ред. Л.А. Асланова. - М.: Физматлит, 2007. - 672 с.
Ivanov Yu.F., Koval N.N., Krysina O.V., et al. // Surf. Coat. Technol. - 2012. - V. 207. - P. 430-434.
Krysina O.V., Koval N.N., Shmakov A.N., Vinokurov Z.S. //j. Phys.: Conf. Ser. - 2016. - V. 669. - P. 12034.
Тимченко Н.А., Зубавичус Я.В., Крысина О.В. и др. // Поверхность. Рентгеновские, синхротронные и нейтронные исследования. - 2016. - № 4. - С. 65-68.
Krysina O.V., Koval N.N., Kovalsky S.S., et al. // Vacuum. - 2021. - V. 187. - P. 110123.
Prokopenko N.A., Petrikova E.A., Shugurov V.V., et al. // IOP Conf. Ser.: Mater. Sci. Eng. - 2021. - V. 1093. - P. 012025.
Иванов Ю.Ф., Коваль Н.Н., Ахмадеев Ю.Х. и др. // Изв. вузов. Физика. - 2021. - Т. 64. - № 12. - С. 32-37.
