Luminescence control of LED heterostructures Grown by method metalorganic vapor phase epitaxy on sapphire

The paper presents the results of spectral and cardinal characteristics of AlGaN/GaN and InGaN/GaN LED heterostructure pulsed cathodes and photoluminescence grown on sapphire by metal organic vapor phase epitaxy are introduced. The effects of high current electron beam energy density on the luminescence spectra and amplitude characteristics of heterostructures are studied. The spatial distribution of fluorescence characteristics on the wafer surface was studied. It is found that in InGaN/GaN heterostructures, the maxim shifts of stimulated cathodoluminescence spectra measured at different points of the sample. This result is due to the changes in the composition and thickness of the quantum dimensional active region, and this change is not due to the ideality of the plate growth process.

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