Gallium arsenide with inclusions of ferromagnetic MnAs nanoclusters as a material for spintronics. Part 1
A review of the literature on the magnetic properties of manganese-doped gallium arsenide (GaMnAs) with nanocluster inclusions is presented. Experimental studies have clearly shown that GaMnAs with nanocluster inclusions has ferromagnetic properties with a Curie temperature of 350-360 K, which is significantly higher than that of a dilute GaMnAs magnetic semiconductor containing uniformly distributed manganese atoms. The ferromagnetic properties of such structures are due to the inclusions of InAs nanoclusters in the GaAs matrix. It is shown that GaMnAs with MnAs inclusions is a promising material for the manufacture of spintronics devices.
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Keywords
gallium arsenide, nanoclusters, magnetic properties, Curie temperatureAuthors
| Name | Organization | |
| Khludkov S.S. | National Research Tomsk State University | knludkov@sibmail.com |
| Prudaev I.A. | National Research Tomsk State University | funcelab@gmail.com |
| Tolbanov O.P. | National Research Tomsk State University | top@mail.tsu.ru |
| Ivonin I.V. | National Research Tomsk State University | iiv@phys.tsu.ru |
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