Diluted magnetic semiconductors based on GaSe crystal matrix with embedded chromium atoms: half-metallic electronic properties and localized magnetic moments | Izvestiya vuzov. Fizika. 2025. № 6. DOI: 10.17223/00213411/68/6/10

Diluted magnetic semiconductors based on GaSe crystal matrix with embedded chromium atoms: half-metallic electronic properties and localized magnetic moments

The spin-polarized electronic properties of diluted magnetic semiconductors based on GaSe crystals containing Cr atoms in some cation sites were calculated. It was found that at x = 0.042, Ga1- x Cr x Se has a pronounced half-metallic electronic structure with ferromagnetic ordering of magnetic moments localized on Cr atoms.

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Keywords

GaSe, diluted magnetic semiconductor, density of electron states, first-principles calculations, half-metallic electronic structure

Authors

Name	Organization	E-mail
Brudnyi Valentin N.	Tomsk State University	brudnyi@mail.tsu.ru
Sarkisov Sergey Yu.	Tomsk State University	sarkisov@mail.tsu.ru

Всего: 2

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