Formation of deeply doped layers by repetitively-pulsed implantation of aluminum by high-power density titanium ion beams

This paper presents the results of studying the formation of deeply doped layers during repetitively-pulsed implantation of aluminum by high-power density titanium ion beams. The regularities of dopant accumulation under conditions of changing thermal fields of the near-surface layer due to an increase in the sample volume and the use of additional heat transfer are studied. It is shown that the synergy of high-intensity implantation and the energy impact of the titanium ion beam with a high-power density of 70 kW/cm2 on the aluminum surface ensures the formation of an ion-doped layer with a depth of about 5 μm, which is two orders of magnitude greater than the projective path length. The distribution of temperature fields in the near-surface layer during repetitively-pulsed implantation of aluminum by titanium ion beams and the phase composition are studied.

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