GaN power electronics as a driver of energy efficiency growth in electrical energy converters
Exponential humanity growth forms new global challenges, such as efficient energy consumption. Transition from Si-based to GaN-based power electronics devices and systems was proposed as a way to increase energy efficiency. The profit from the transition to GaN-based devices was demonstrated as an increase in energy converters efficiency and reduction of mass and weight parameters on a system level. The review of the current state of the GaN commercial devices and systems was carried out. The discrete GaN/Si based depleted mode and enhanced mode HEMT are commercially available and widely used today. Vertical GaN/GaN transistors are not commercially available yet, but expected to enable extremely high breakdown voltages and high currents. The development and mass production of GaN ICs is one of the basic trends in the development of power GaN microelectronics. Nowadays power GaN IC are not widespread on a commercial market, dew to early stage of technology development, as well as the lack of a number of necessary IC elements, such as a complementary pair of digital GaN transistors with p- and «-type channels and high-current GaN diodes. The results of development of four various power GaN integrated circuit based on the GaN/SOI technology platform are presented in the paper. A half-bridge IC with integrated driver and power e-mode HEMT for 650 V applications, a half-bridge gate driver IC and a single channel gate driver IC for 650V e-mode n-GaN HEMT were developed for high voltage operation basing on IMEC GANIC650SOI design kit. Basic electrical parameters of high voltage ICs and layout design are presented in the paper. The developed solutions were adopted for low-voltage operations basing on IMEC GANIC200SOI design kit. As a result, 200V half-bridge Ic with on-chip drivers and power e-HEMT was developed. The use of GaN/SOI technological platform seems to be one of the effective methods for suppressing sidegating and backgating effects and obtaining ICs with improved characteristics. The authors express their appreciation to Center for Collective Design of Electronic Component Base and Radioelectronics Equipment of National Research University of Electronic Technology for providing access to the licensed CAD and computing infrastructure. The authors express their gratitude to Andrey I. Miller. The authors declare no conflicts of interests.
Keywords
energy efficiency,
GaN power electronics,
monolithic integration,
GaN/SOI,
half-bridgeAuthors
| Bartenev Aleksandr I. | Tomsk University of Control Systems and Radioelectronic | san4ubas1@gmail.com |
| Kagadey Valery A. | Tomsk State University | vak@mail.tsu.ru |
| Koryakovtsev Artyom S. | Tomsk University of Control Systems and Radioelectronic | artem.s.koriakovtsev@tusur.ru |
| Polyntsev Egor S. | Tomsk State University | e.polyntsev@gmail.com |
| Pomazanov Aleksei V. | Tomsk University of Control Systems and Radioelectronic | aleksei.v.pomazanov@tusur.ru |
| Prokazina Irina Y. | Tomsk State University | irina_tusur@mail.ru |
| Sheyerman Feodor I. | Tomsk University of Control Systems and Radioelectronic | fish@tusur.ru |
Всего: 7
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